Volume 104, Issue 3 p. 1216-1228

ORIGINAL ARTICLE

Growth of thin film ferroelectric PZT, PHT, and antiferroelectric PHO from atomic layer deposition precursors

Nicholas A. Strnad,

Corresponding Author

Nicholas A. Strnad

[email protected]

orcid.org/0000-0003-1621-521X

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

Correspondence

Nicholas A. Strnad, Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA.

Email: [email protected]

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Brendan M. Hanrahan,

Brendan M. Hanrahan

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

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Daniel M. Potrepka,

Daniel M. Potrepka

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

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Jeffrey S. Pulskamp,

Jeffrey S. Pulskamp

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

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Raymond J. Phaneuf,

Raymond J. Phaneuf

Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA

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Ronald G. Polcawich,

Ronald G. Polcawich

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

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Nicholas A. Strnad,

Corresponding Author

Nicholas A. Strnad

[email protected]

orcid.org/0000-0003-1621-521X

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

Correspondence

Nicholas A. Strnad, Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA.

Email: [email protected]

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Brendan M. Hanrahan,

Brendan M. Hanrahan

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

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Daniel M. Potrepka,

Daniel M. Potrepka

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

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Jeffrey S. Pulskamp,

Jeffrey S. Pulskamp

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

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Raymond J. Phaneuf,

Raymond J. Phaneuf

Department of Materials Science and Engineering, University of Maryland, College Park, MD, USA

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Ronald G. Polcawich,

Ronald G. Polcawich

Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Adelphi, MD, USA

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First published: 15 October 2020

https://doi.org/10.1111/jace.17521

Citations: 11

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Abstract

We present a conformal method of growing ferroelectric lead hafnate-titanate (PbHf_xTi₁₋_xO₃, PHT) and lead zirconate-titanate (PbZr_xTi₁₋_xO₃, PZT) using atomic layer deposition (ALD) precursors. The 4+ cation precursors consist of tetrakis dimethylamino titanium (TDMAT), tetrakis dimethylamino zirconium (TDMAZ) and tetrakis dimethyl amino hafnium (TDMAH) for Ti, Zr, and Hf, respectively. The Pb (2+) precursor was Lead bis(3-N,N-dimethyl-2-methyl-2-propanoxide) [Pb(DMAMP)₂]. PZT was limited to lead titanate (PTO)-rich compositions, where x <0.25 for PbZr_xTi₁₋_xO₃, and exhibited a remnant polarization of 26-27 µC/cm² with a coercive field between 150 and 170 kV/cm. The 3D-structure coating capability of PZT was demonstrated by deposition on micromachined trench sidewalls 45 µm deep. We fabricated Microelectromechanical systems (MEMS) cantilever arrays with PZT thin films grown using the present method and demonstrated piezoelectric actuation. Alternatively, PHT was deposited with Ti and Hf compositions within ±1 at.% of the morphotropic phase boundary (MPB). The PHT exhibited a remanent polarization of 7.0-8.7 µC/cm² with a coercive field between 84-100 kV/cm. We applied the same Pb and Hf precursors from the PHT process to grow antiferroelectric lead-hafnate (PHO), which showed the characteristic electric field-induced ferroelectric phase transition at approximately ±280 kV/cm and a maximum polarization of approximately ±32.8 µC/cm².

Supporting Information

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Volume104, Issue3

March 2021

Pages 1216-1228

Growth of thin film ferroelectric PZT, PHT, and antiferroelectric PHO from atomic layer deposition precursors

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Growth of thin film ferroelectric PZT, PHT, and antiferroelectric PHO from atomic layer deposition precursors

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